摘要： 通过比较分析研究射频开关管宽度与堆叠级数变化和栅极与体区偏置电阻对射频开关性能的影响，主要包括前两级射频开关管宽度、不同级数射频开关管宽度、逐步变化射频开关管宽度和偏置电阻等设计参数，对射频开关插入损耗、隔离度和功率承受能力的影响。研究结果为射频开关电路设计提供参考。

中图分类号：TN432 文献标志码：A DOI: 10.16157/j.issn.0258-7998.246218
中文引用格式： 刘张李. 设计参数对射频SOI开关功率承受能力影响研究[J]. 电子技术应用，2025，51(9)：30-34.
英文引用格式： Liu Zhangli. Effects of design parameter on power handling capability of RF SOI switch[J]. Application of Electronic Technique，2025，51(9)：30-34.

Effects of design parameter on power handling capability of RF SOI switch

Abstract： The effects of design parameter on power handling capability of radio-frequency silicon-on-insulator (RF SOI) switch were comprehensively investigated in this work, including the width of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under different stack, and the Gate/Body bias resistance. The impacts of larger 1st/2nd stage MOSFET width, larger N stage MOSFET width, gradual change MOSFET width and different Gate/Body bias resistance on RF switch insertion loss, isolation and power handling capability were discussed in detail. The result can be reference as RF switch circuit design.

Key words : RF switch；power handling capability；bias resistance；MOSFET width