摘要： 通过比较分析研究电容网络对射频SOI开关功率承受能力的影响，主要包括射频开关晶体管源极与漏极之间的横向耦合电容Cdsn和射频开关源极与漏极节点到GND的纵向耦合电容Cgndn。研究内容包括射频开关堆叠结构Cdsn/Cgndn逐步变化，前两级Cdsn/Cgndn电容值大小，前N级Cdsn/Cgndn电容网络对射频开关插入损耗、隔离度和功率承受能力的影响，研究结果为射频开关电路设计提供参考。

中图分类号：TN432 文献标志码：A DOI: 10.16157/j.issn.0258-7998.246217
中文引用格式： 刘张李. 电容网络对射频SOI开关功率承受能力影响研究[J]. 电子技术应用，2025，51(7)：36-40.
英文引用格式： Liu Zhangli. Effects of capacitor network on power handling capability of RF SOI switch[J]. Application of Electronic Technique，2025，51(7)：36-40.

Effects of capacitor network on power handling capability of RF SOI switch

Abstract： The effects of capacitor network on power handling capability of Radio-Frequency Silicon-On-Insulator (RF SOI) switch were comprehensively investigated in this work, including the horizontal coupling capacitor Cdsn between the RF Switch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) drain-to-source, and the vertical coupling capacitor Cgndn between the RF Switch MOSFET drain/source-to-gnd. The impacts of stack structure with gradual change Cdsn/Cgndn, larger 1st/2nd stage Cdsn/Cgndn and larger N stage Cdsn/Cgndn capacitor network on RF switch insertion loss, isolation and power handling capability was discussed in detail. The result can be reference as RF switch circuit design.

Key words : RF switch；power handling capability；capacitor network