摘要： 为满足上变频器对低插入损耗、高抑制度滤波器的需要，设计并制作了一种V频段H面膜片带通滤波器，该滤波器由六个矩形谐振腔串联组成。六个谐振腔和七个耦合窗的尺寸初值通过理论计算得到，采用三维电磁场仿真软件HFSS对滤波器进行了结构建模和优化仿真。制作了滤波器样品并进行了测试，测试结果表明在47.2~50.2 GHz带内插入损耗小于0.6 dB，回波损耗优于15.6 dB，对42.6 GHz频点的抑制度为73.8 dBc，对54.8 GHz频点的抑制度为52.8 dBc，测试结果与软件仿真结果基本一致。

中图分类号：TN713 文献标志码：A DOI: 10.16157/j.issn.0258-7998.256362
中文引用格式： 刘立浩，秦帅丰，宁丽鹏. V频段H面膜片带通滤波器设计[J]. 电子技术应用，2025，51(7)：16-19.
英文引用格式： Liu Lihao，Qin Shuaifeng，Ning Lipeng. Design of an H-plane iris band-pass filter at V-band[J]. Application of Electronic Technique，2025，51(7)：16-19.

Design of an H-plane iris band-pass filter at V-band

Abstract： To meet the needs of up converters for low insertion loss and high suppression filters, an H-plane iris band-pass filter at V-band was designed and fabricated. This filter was composed of six rectangular resonant cavities, which were connected together by series. The initial size values of six resonant cavities and seven coupling windows were obtained through theoretical calculations. The filter structure was modeled and optimized using three-dimensional electromagnetic simulation software HFSS. The sample filter was fabricated and measured. The measured results show that the insertion loss is less than 0.6 dB, the return loss is better than 15.6 dB between 47.2 GHz and 50.2 GHz. The stop-band suppression is 73.8 dBc at 42.6 GHz and 52.8 dBc at 54.8 GHz. The measured results are consistent with the simulation results.

Key words : V-band；H-plane；E-plane；iris；band-pass filter；waveguide