摘要： 辐照场景下存储单元可能发生数据翻转，为了提高数据的可靠性，设计了一种基于动态自刷新和扩展汉明码的纠错机制。该电路包括编码模块、解码纠错模块、数据存储模块、动态自刷新管理模块，具有纠一检二的功能以及较低的动态功耗。采用Verilog硬件描述语言实现并搭建了仿真验证系统，仿真结果表明，该纠错机制能够有效纠正单比特错误、检测上报双比特错误，提高了存储单元的可靠性。该机制在本公司研发的交换芯片中大量应用，通过了辐照翻转实验，验证了该机制的有效性。

中图分类号：TN402 文献标志码：A DOI: 10.16157/j.issn.0258-7998.257289
中文引用格式： 王滔，郭建刚，何泉初，等. 基于动态自刷新和扩展汉明的纠错机制[J]. 电子技术应用，2026，52(7)：63-67.
英文引用格式： Wang Tao，Guo Jiangang，He Quanchu，et al. Error correction mechanism based on dynamic self-refreshing and extended Hamming code[J]. Application of Electronic Technique，2026，52(7)：63-67.

Error correction mechanism based on dynamic self-refreshing and extended Hamming code

Abstract： In the irradiation scenario, data inversion may occur in the storage unit. To enhance data reliability, a correction mechanism based on dynamic self-refreshing and extended Hamming code is designed. This circuit consists of an encoding module, a decoding and error correction module, a data storage module, and a dynamic self-refreshing management module. It has the function of correcting one-bit errors and detecting two-bit errors, as well as low dynamic power consumption. The mechanism is implemented using Verilog hardware description language and a simulation verification system is built. Simulation results show that this error correction mechanism can effectively correct single-bit errors and detect and report double-bit errors, improving the reliability of the storage unit. This mechanism has been widely applied in the switching chips developed by our company and has passed the irradiation upset test, verifying its effectiveness.

Key words : dynamic self-refreshing；extended Hamming code；high reliability；error detection and correction